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HAT1108C

Part Number	HAT1108C
Manufacturer	Renesas Technology
Description	Silicon P-Channel Power MOSFET
Published	Nov 20, 2008
Detailed Description	HAT1108C Silicon P Channel MOS FET Power Switching REJ03G1234-0500 Rev.5.00 Aug 30, 2006 Features • Low on-resistance R...
Datasheet	HAT1108C PDF File

Overview

HAT1108C Silicon P Channel MOS FET Power Switching REJ03G1234-0500 Rev.
5.
00 Aug 30, 2006 Features • Low on-resistance RDS(on) = 155 mΩ typ.
(at VGS = –10 V) www.
DataSheet4U.
com • Low drive current.
• 4.
5 V gate drive devices.
• High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to Source voltage VDSS –30 Gate to Source voltage VGSS –20 / +10 Drain current ID –1.
5 Note1 Drain peak current ID (pulse) –6 Body - Drain diode reverse drain current IDR –1.
5 Channel dissipation PchNote 2 830 Chan...

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HAT1108C Silicon P-Channel Power MOSFET - Renesas Technology

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