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HAT2092R

Renesas Technology
Part Number HAT2092R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gat...
Datasheet PDF File HAT2092R PDF File

HAT2092R
HAT2092R

Overview
HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.
5 V gate drive • Low drive current • High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.
3.
00 Jan.
13.
2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body–drain diode reverse drain current IDR 11 Channel dissipation Pch Note2 2 Channel dissipation Pch Note3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s 3.
2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A W W °C °C Rev.
3.
00 Jan.
13, 20...


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