DatasheetsPDF.com

HAT2137H

Renesas Technology
Part Number HAT2137H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 20, 2008
Detailed Description HAT2137H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High...
Datasheet PDF File HAT2137H PDF File

HAT2137H
HAT2137H

Overview
HAT2137H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 3.
8 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1191-0400 (Previous: ADE-208-1579B) Rev.
4.
00 Sep 07, 2005 1, 2, 3 4 5 Source Gate Drain Rev.
4.
00 Sep 07, 2005 page 1 of 7 HAT2137H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Tc = 25 °C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 40 ±20 45 180 45 30 72 30 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4.
Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss 40 — — ±20 — — — — ±10 — — 1 2.
0 — 3.
5 — 3.
8 4.
8 — 4.
4 6.
0 38 64 — — 6200 — — 780 — — 410 — V ID = 10 mA, VGS = 0 V IG = ±100 µA, VDS = 0 µA VGS = ±16 V, VDS = 0 µA VDS = 40 V, VGS = 0 V VDS = 10 V, ID = 1 mA mΩ ID = 22.
5 A, VGS = 10 V Note 4 mΩ ID = 22.
5 A, VGS = 7 V Note 4 S ID = 22.
5 A, VDS = 10 V Note 4 pF VDS = 10 V pF VGS = 0 pF f = 1 MHz Qg — 95 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)