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HAT2188WP

Part Number	HAT2188WP
Manufacturer	Renesas Technology
Description	Silicon N-Channel Power MOSFET
Published	Nov 20, 2008
Detailed Description	HAT2188WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High densi...
Datasheet	HAT2188WP PDF File

Overview

HAT2188WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 D DDD 4 G S SS 1 23 5 678 4 32 1 REJ03G0534-0500 Rev.
5.
00 Mar.
24.
2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C ...

Similar Datasheet

HAT2188WP Silicon N-Channel Power MOSFET - Renesas Technology

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