DatasheetsPDF.com

08P06P

Infineon Technologies
Part Number 08P06P
Manufacturer Infineon Technologies
Description SPD08P06P
Published Nov 21, 2008
Detailed Description Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-...
Datasheet PDF File 08P06P PDF File

08P06P
08P06P

Overview
Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.
3 -8.
8 V W · · · · www.
DataSheet4U.
com A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.
8 -6.
2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.
2 70 4.
2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.
8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.
8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 42 -55.
.
.
+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.
DataSheet4U.
com resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area 1) Symbol min.
Values typ.
- SPD08P06P SPU08P06P Unit max.
3.
6 100 75 50 K/W RthJC RthJA RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min.
Values typ.
-3 max.
-4 µA -0.
1 -10 -10 0.
23 -1 -100 -100 0.
3 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.
1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = -250 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 150 °C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -6.
2 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)