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SPD02N60

Siemens Semiconductor
Part Number SPD02N60
Manufacturer Siemens Semiconductor
Description SIPMO Power Transistor
Published Nov 21, 2008
Detailed Description Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated www.Data...
Datasheet PDF File SPD02N60 PDF File

SPD02N60
SPD02N60


Overview
Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated www.
DataSheet4U.
com Pin 1 G Pin 2 D Pin 3 S Type SPD02N60 SPU02N60 VDS ID 600 V 2 A RDS(on) @ VGS Package VGS = 10 V P-TO252 5.
5 Ω P-TO251 Ordering Code Q67040-S4133 Q67040-S4127-A2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value 2 1.
3 8 135 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current IDpulse EAS T C = 25 °C Avalanche energy, single pulse mJ I D = 2 A, VDD = 50 V, R GS = 25 Ω, T j = 25 °C Gate source voltage Power dissipation VGS Ptot Tj T stg ±20 55 -55 .
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+150 -55 .
.
.
+150 55/150/56 V W °C T C = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 10 / 1998 Preliminary data SPD02N60 SPU02N60 Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case www.
DataSheet4U.
com Symbol min.
Values typ.
max.
2.
25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 600 2.
1 3 4 V VGS = 0 V, I D = 0.
25 mA Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current µA 0.
1 10 4.
2 1 100 100 5.
5 nA Ω VDS = 600 V, VGS = 0 V, T j = 25 °C VDS = 600 V, VGS = 0 V, T j = 150 °C Gate-source leakage current I GSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 1.
3 A 1 Device on 50mm*50mm*1.
5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
Semiconductor Group 2 10 / 1998 Preliminary data Electrical Characteristics Parameter Symbol Values SPD02N60 SPU02N60 Unit at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Transcon...


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