DatasheetsPDF.com

SPD08N05L

Infineon Technologies
Part Number SPD08N05L
Manufacturer Infineon Technologies
Description SIPMOS-R POWER TRANSISTOR
Published Nov 21, 2008
Detailed Description SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state ...
Datasheet PDF File SPD08N05L PDF File

SPD08N05L
SPD08N05L

Overview
SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.
1 8.
4 V Ω A Enhancement mode Level • Avalanche rated www.
DataSheet4U.
com • Logic • dv/dt rated • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.
4 5.
9 34 35 2.
4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.
4 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 8.
4 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 24 -55.
.
.
+175 55/175/56 V W ˚C TC = 25 ˚C Operating and...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)