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KM68FV8100

Samsung Semiconductor
Part Number KM68FV8100
Manufacturer Samsung Semiconductor
Description CMOS SRAM
Published Nov 26, 2008
Detailed Description Preliminary KM68FV8100 Family Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM ...
Datasheet PDF File KM68FV8100 PDF File

KM68FV8100
KM68FV8100


Overview
Preliminary KM68FV8100 Family Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.
History 0.
0 Initial draft Draft Date August 25, 1999 Remark Preliminary www.
DataSheet4U.
com The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to yourquestions about device.
If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 0.
0 August 1999 Preliminary KM68FV8100 Family FEATURES • Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 3.
0~3.
6V • Low Data Retention Voltage: 1.
5V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R, 48-FBGA-8.
00x12.
00 CMOS SRAM GENERAL DESCRIPTION The KM68FV8100 families are fabricated by SAMSUNG′s advanced full CMOS process technology.
The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation with low data retention current.
1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM PRO DUCT FAMILY Power Dissipation Product Family www.
DataSheet4U.
com KM68FV8100I Operating Temperature Vcc Range Speed Standby (ISB1, Typ.
) 0.
5µ A Operating (ICC1, Max) 3mA PKG Type 44-TSOP2-400F/R 48-FBGA-8.
00x12.
00 Industrial(-40~85°C) 3.
0~3.
6V 551)/70ns 1.
The parameter is measured with 30pF test load.
PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen.
Precharge circuit.
A DNU OE A0 A1 A2 CS2 Vcc Vss B DNU DNU A3 A4 CS1 DNU Row Addresses Row select Memory array 2048 rows 256 ×8 columns C I/O1 DNU A5 A6 DNU I/O5 D Vss I/O2 A17 A7 I/O6 Vcc E Vcc I/O3 VCC A16 I/O7 Vss I/O 1~I/O8 Data cont I/O Circuit Column select F I/O4 DNU A14 A15 DNU I/O8 Data cont G DNU DNU A12 A13 W...



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