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HUR830S

Sirectifier Semiconductors
Part Number HUR830S
Manufacturer Sirectifier Semiconductors
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Published Nov 26, 2008
Detailed Description HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A...
Datasheet PDF File HUR830S PDF File

HUR830S
HUR830S

Overview
HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.
DataSheet4U.
com A=Anode, Dimensions TO-263(D2PAK) C Dim.
A A1 b b2 c c2 D D1 Millimeter Min.
Max.
4.
06 2.
03 0.
51 1.
14 0.
46 1.
14 8.
64 8.
00 4.
83 2.
79 0.
99 1.
40 0.
74 1.
40 9.
65 8.
89 Inches Min.
Max.
.
160 .
080 .
020 .
045 .
018 .
045 .
340 .
315 .
190 .
110 .
039 .
055 .
029 .
055 .
380 .
350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.
65 10.
29 6.
22 8.
13 2.
54 BSC 14.
61 2.
29 1.
02 1.
27 0 0.
46 15.
88 2.
79 1.
40 1.
78 0.
20 0.
74 .
380 .
405 .
245 .
320 .
100 BSC .
575 .
090 .
040 .
050 0 .
018 .
625 .
110 .
055 .
070 .
008 .
029 HUR830S VRSM V 300 VRRM V 300 1.
2.
3.
4.
Gate Collector Emitter Collector Botton Side Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=130oC; rectangular, d=0.
5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.
5.
VR typ.
; f=10kHz; repetitive o Maximum Ratings 35 10 60 0.
5 0.
2 -55.
.
.
+1...


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