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EN29F002N

ETC
Part Number EN29F002N
Manufacturer ETC
Description 2 Megabit (256K x 8-bit) Flash Memory
Published Nov 28, 2008
Detailed Description EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/wri...
Datasheet PDF File EN29F002N PDF File

EN29F002N
EN29F002N

Overview
EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.
0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.
5s typical • JEDEC standard DATA polling and toggle bits feature • Hardware RESET Pin (n/a for EN29F002N) • Single Sector and Chip Erase • Sector Protection / Temporary Sector Unprotect ( RESET = VID) • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read and program another sector during Erase Suspend Mode • 0.
4 µm double-metal double-poly triple-well CMOS Flash Technology • Low Vcc write in...


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