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MRF6VP2600HR6

Part Number	MRF6VP2600HR6
Manufacturer	Freescale Semiconductor
Description	RF Power FET
Published	Nov 30, 2008
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Desi...
Datasheet	MRF6VP2600HR6 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg.
, f = 225 MHz, Channel Bandwidth = 7.
61 MHz, Input Signal PAR = 9.
3 dB @ 0.
01% Probability on CCDF.
Power Gain — 25 dB Drain Efficiency — 28.
5% ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 25.
3 ...

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MRF6VP2600HR6 RF Power FET - Freescale Semiconductor

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