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SST29SF020

Silicon Storage
Part Number SST29SF020
Manufacturer Silicon Storage
Description 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
Published Dec 2, 2008
Detailed Description 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512...
Datasheet PDF File SST29SF020 PDF File

SST29SF020
SST29SF020

Overview
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040 SST29SF/VF512 / 010 / 020 / 0405.
0 & 2.
7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories Preliminary Specifications FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 5.
0V-only for SST29SF512/010/020/040 – 2.
7-3.
6V for SST29VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040 • Sector-Erase Capability – Uniform 128 Byte sectors • Fast Read Access Time: – 55 ns – 70 ns • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility for SST29SFxxx • CMOS I/O Compatibility for SST29VFxxx • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST29SFxxx devices write (Program or Erase) with a 4.
5-5.
5V power supply.
The SST29VFxxx devices write (Program or Er...


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