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MRF6V14300HSR3

Part Number	MRF6V14300HSR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Dec 5, 2008
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors ...
Datasheet	MRF6V14300HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev.
2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle.
These devices are suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.
6 W Avg.
), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.
5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power www.
DataSheet4U.
com Features MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V P...

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MRF6V14300HSR3 RF Power Field Effect Transistors - Motorola

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