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M366S0823CTL

Samsung Semiconductor
Part Number M366S0823CTL
Manufacturer Samsung Semiconductor
Description SDRAM DIMM
Published Dec 6, 2008
Detailed Description M366S0823CTL M366S0823CTL SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Syn...
Datasheet PDF File M366S0823CTL PDF File

M366S0823CTL
M366S0823CTL

Overview
M366S0823CTL M366S0823CTL SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.
3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.
The Samsung M366S0823CTL consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.
Two 0.
33uF decoupling capacitors are mounted on www.
DataSheet4U.
com the printed circuit board in parallel for each SDRAM.
The M366S0823CTL is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE • Perfo...


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