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SiHFBC30L

Vishay Siliconix
Part Number SiHFBC30L
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n...
Datasheet PDF File SiHFBC30L PDF File

SiHFBC30L
SiHFBC30L

Overview
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 31 4.
6 17 Single D FEATURES 600 2.
2 • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a.
See device orientation.
D2PAK (TO-263) IRFBC30SPbF SiHFBC30S-E3 IRFBC30S SiHFBC30S D2PAK (TO-263) IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) IRFBC30LPbF SiHFBC30L-E3 IRFBC30L SiHFBC30L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TA = 25 °C TC = 25 °C VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV...


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