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SiHFBC40L

Vishay Siliconix
Part Number SiHFBC40L
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (...
Datasheet PDF File SiHFBC40L PDF File

SiHFBC40L
SiHFBC40L

Overview
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.
3 Qgd (nC) 30 Configuration Single 1.
2 D I2PAK (TO-262) D2PAK (TO-263) G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 Lead (Pb)-free Note a.
See device orientation.
IRFBC40SPbF SiHFBC40S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications.
D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40STL-E3a I2PAK (TO-262) SiHFBC40L-GE3 IRFBC40LPbF SiHFBC40L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagee Gate-Source Voltagee Continuous Drain Current Pulsed Drain Currenta,e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C VDS VGS ID IDM EAS IAR EAR PD ...


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