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SiHFD224

Vishay Siliconix
Part Number SiHFD224
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFD224, SiHFD224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHFD224 PDF File

SiHFD224
SiHFD224

Overview
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.
7 7.
8 Single D FEATURES 250 1.
1 www.
DataSheet4U.
com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free RoHS COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION Package Lead (Pb)-free HEXDIP IRFD224PbF SiHFD224-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 250 ± 20 0.
63 0.
40 5.
0 0.
0083 EAS IAR Energya TC = 25 °C EAR PD dV/dt TJ, Tstg for 10 s 60 0.
63 0.
10 1.
0 4.
8 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 15 mH, RG = 25 Ω, IAS = 2.
5 A (see fig.
12).
c.
ISD ≤ 4.
4 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
Document Number: 91132 S-Pending-Rev.
A, 23-Jun-08 WORK-IN-PROGRESS www.
vishay.
com 1 IRFD224, SiHFD224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maxim...


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