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SiHFI614G

Vishay Siliconix
Part Number SiHFI614G
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File SiHFI614G PDF File

SiHFI614G
SiHFI614G

Overview
IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.
2 1.
8 4.
5 Single D FEATURES 250 2.
0 • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT www.
DataSheet4U.
com TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI614GPbF SiHFI614G-E3 IRFI614G SiHFI614G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
VDD = 50 V, starting TJ = 25 °C, L = 22 mH, RG = 25 Ω, IAS = 2.
1 A (see fig.
12).
ISD ≤ 2.
7 A, dI/dt ≤ 65 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
1.
6 mm from case.
VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 250 ± 20 2.
1 1.
3...


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