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SiHFDC20

Vishay Siliconix
Part Number SiHFDC20
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHFDC20 PDF File

SiHFDC20
SiHFDC20

Overview
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 18 3.
0 8.
9 Single D FEATURES • Dynamic dV/dt Rating 600 4.
4 • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFDC20PbF SiHFDC20-E3 IRFDC20 SiHFDC20 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 °C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 54 mH, RG = 25 Ω, IAS = 1.
3 A (see fig.
12).
c.
ISD ≤ 4.
4 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91142 S-Pending-Rev.
A, 13-Jun-08 EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 20 0.
32 0.
20 2.
6 0.
0083 50 0.
32 0.
10 1.
0 3.
0 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A U...


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