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SiHFI640G

Vishay Siliconix
Part Number SiHFI640G
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File SiHFI640G PDF File

SiHFI640G
SiHFI640G

Overview
IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 70 13 39 Single D FEATURES 200 0.
18 • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The FULLPAK is mounted to a heatsink using a si...


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