DatasheetsPDF.com

SiHFL9110

Vishay Siliconix
Part Number SiHFL9110
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description www.vishay.com IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET S SOT-223 G D S D G D P-Channel MOSFET Marking...
Datasheet PDF File SiHFL9110 PDF File

SiHFL9110
SiHFL9110

Overview
www.
vishay.
com IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET S SOT-223 G D S D G D P-Channel MOSFET Marking code: FF PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.
2 8.
7 2.
2 4.
1 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a.
See device orientation b.
“-BE3” denotes alternate manufacturing location FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.
Power dissipation of greater than 1.
25 W is possible in a typical surface mount application.
SOT-223 SiHFL9110TR-GE3 a IRFL9110TRPbF-BE3 a, b IRFL9110TRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d VGS at -10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C For 10 s VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, Tstg Notes a.
Repetitive rating; ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)