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SM8G45

Toshiba Semiconductor
Part Number SM8G45
Manufacturer Toshiba Semiconductor
Description BI?DIRECTIONAL TRIODE THYRISTOR
Published Dec 9, 2008
Detailed Description SM8G45, SM8J45, SM8G45A, SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, S...
Datasheet PDF File SM8G45 PDF File

SM8G45
SM8G45

Overview
SM8G45, SM8J45, SM8G45A, SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.
M.
S On−State Current: IT (RMS) = 8A High Commutating (dv / dt) Unit: mm MAXIMUM RATINGS www.
DataSheet4U.
com CHARACTERISTIC SM8G45 SM8G45A SM8J45 SM8J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off− State Voltage V R.
M.
S On−State Current (Full Sine Waveform Tc = 105°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 8 80 (50Hz) 88 (60Hz) 32 50 5 0.
5 10 2 −40~125 −40~125 A A A s A / µs W W V A °C °C 2 JEDEC JEITA TOSHIBA TO-220AB ― 13-10G1A Weight: 2.
0 g (typ.
) 1 2004-07-06 SM8G45, SM8J45, SM8G45A, ...


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