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M10LZ47

Toshiba Semiconductor
Part Number M10LZ47
Manufacturer Toshiba Semiconductor
Description SM10LZ47
Published Dec 11, 2008
Detailed Description SM10LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM10LZ47 AC POWER CONTROL APPLICATIONS Unit: mm l ...
Datasheet PDF File M10LZ47 PDF File

M10LZ47
M10LZ47

Overview
SM10LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM10LZ47 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 800V l R.
M.
S.
On−State Current l High Commutation (dv / dt) l Isolation Voltage www.
DataSheet4U.
com : IT (RMS) = 10A : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage R.
M.
S On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.
) 2 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL 2 RATING 800 10 100 (50Hz) 110 (60Hz) 50 50 5 0.
5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.
7g ― ― 13−10H1A Note: di / dt test condition VDRM = 0.
5 × Rated, I...


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