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IXFH120N15P

IXYS Corporation
Part Number IXFH120N15P
Manufacturer IXYS Corporation
Description Polar MOSFETs
Published Dec 11, 2008
Detailed Description Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode ...
Datasheet PDF File IXFH120N15P PDF File

IXFH120N15P
IXFH120N15P

Overview
Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr www.
DataSheet4U.
com Symbol VDSS VDGR VGS VGSM ID25 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.
5 10 600 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247AD (IXFH) G D D (TAB) S ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight TO-268 (IXFT) G S D = Drain TAB = Drain D (TAB) G = Gate S = Source 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 TO-268 (TO-247) 300 1.
13/10 Nm/lb.
in.
5.
5 5.
0 g g Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min.
Typ.
Max.
300 3.
0 5.
0 ±100 25 1000 17 V V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PolarHTTM DMOS transistors utilize proprietary designs and process.
US patent is pending.
DS99210(9/04) © 2004 IXYS All rights reserved IXFH 120N15P IXFT 120N15P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
40 60 4950 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 330 30 VGS = 10 V, VDS = 0.
5 VDSS, ID = ID25 RG = 4 Ω (External) 33 75 30 150 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 34 77 0.
25 (TO-247) 0.
21 S pF pF pF ns ns ns ns nC nC...


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