DatasheetsPDF.com

IRFR110

Vishay Siliconix
Part Number IRFR110
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET DPAK (TO-252) D D G S G S N-Channel MOSFET PRODUCT...
Datasheet PDF File IRFR110 PDF File

IRFR110
IRFR110


Overview
www.
vishay.
com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET DPAK (TO-252) D D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.
3 0.
54 2.
3 3.
8 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling Available • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION PACKAGE DPAK (TO-252) Lead (Pb)-free and halogen-free Lead (Pb)-free Lead (Pb)-free and halogen-free SiHFR110-GE3 IRFR110PbF IRFR110PbF-BE3 ab Notes a.
See device orientation b.
“-BE3” denotes alternate manufacturing location DPAK (TO-252) SiHFR110TRL-GE3 IRFR110TRLPbF a IRFR110TRLPbF-BE3 ab DPAK (TO-252) SiHFR110TR-GE3 IRFR110TRPbF a IRFR110TRPbF-BE3 ab DPAK (TO-252) SiHFR110TRR-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount)e Peak diode recovery dV/dt c VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)