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IRFU310

Vishay Siliconix
Part Number IRFU310
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D...
Datasheet PDF File IRFU310 PDF File

IRFU310
IRFU310


Overview
www.
vishay.
com IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 3.
6 12 1.
9 6.
5 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching Available • Fully avalanche rated • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION Package DPAK (TO-252) SiHFR310-GE3 Lead (Pb)-free and halogen-free SiHFR310TRR-GE3 a Lead (Pb)-free IRFR310PbF Notes a.
See device orientation b.
“-BE3” denotes alternate manufacturing location DPAK (TO-252) SiHFR310TRL-GE3 a IRFR310TRLPbF-BE3 a, b IRFR310TRLPbF a DPAK (TO-252) SiHFR310TR-GE3 a IRFR310TRPbF-BE3 a, b IRFR310TRPbF a IPAK (TO-251) SiHFU310-GE3 IRFU310PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d VGS at 10 V TC...


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