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AP60L02P

Advanced Power Electronics
Part Number AP60L02P
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Dec 14, 2008
Detailed Description AP60L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL...
Datasheet PDF File AP60L02P PDF File

AP60L02P
AP60L02P

Overview
AP60L02S/P Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement www.
DataSheet4U.
com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 12mΩ 50A ▼ Fast Switching G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60L02P) is available for low-profile applications.
G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.
5 0.
5 Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
0 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200218032 AP60L02S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
25 1 - Typ.
0.
037 Max.
Units 12 26 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance VGS=10V, ID=25A VGS=4.
5V, ID=20A 30 21 2.
8 16 8 75 22 20 605 415 195 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150...


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