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R8A66120FFA

Part Number	R8A66120FFA
Manufacturer	Renesas Technology
Description	4M-bit x 2 MULTIPLE FIELD MEMORY
Published	Dec 19, 2008
Detailed Description	R8A66120FFA 4M-bit x 2 MULTIPLE FIELD MEMORY Description RJJ03FXXXREJ03F0161-0170 Rev.1.70 May.16.2008 R8A66120FFA is ...
Datasheet	R8A66120FFA PDF File

Overview

R8A66120FFA 4M-bit x 2 MULTIPLE FIELD MEMORY Description RJJ03FXXXREJ03F0161-0170 Rev.
1.
70 May.
16.
2008 R8A66120FFA is high-speed field memory with two FIFO (First In First Out) memories of 4M-bit, which uses high-performance silicon gate process technology.
Features •Total memory Capacity 8Mega-bit •High speed operation cycle time 10.
0ns(Min.
) fmax = 100MHz output access time 6.
0ns(Max.
) •Output hold time 1.
0ns(Min.
) •Supply voltage 3.
3 ± 0.
3V •Variable length delay bit •Synchronous write/read operation •3 states output •Package PLQP0048KB-A (48P6Q-A) ( 48pins 7x7mm body LQFP ) W-CDMA base station, Digital PPC, Digital TV,VTR and so on.
www.
DataSheet4U.
com Application Mode Descriptions 1K-word = 1024-words 1024K-word 4bit bus I/F DA<3:0> CKA WRESA WEA DB<3:0> CKB WRESB WEB 4 1024K-w X 4-bit FIFO 4 1024K-w X 4-bit FIFO 4 QA<3:0> RRESA REA 4 QB<3:0> RRESB REB The 2 pieces of 1024K-word x 4-bit FIFO can be operated completely independently.
2-system individual input 2-system ...

Similar Datasheet

R8A66120FFA 4M-bit x 2 MULTIPLE FIELD MEMORY - Renesas Technology

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