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IRG4PC30KDPBF

Part Number	IRG4PC30KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOALR TRANSISTOR
Published	Dec 30, 2008
Detailed Description	PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (star...
Datasheet	IRG4PC30KDPBF PDF File

Overview

PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, www.
DataSheet4U.
com VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Short Circuit Rated UltraFast IGBT C High short circuit rating optimized for motor control, Features VCES = 600V G E VCE(on) typ.
= 2.
21V @VGE = 15V, IC = 16A n-channel Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC30KD2 and IRGBC30MD2 products For hints see design tip 97003 Benefits TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C...

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IRG4PC30KDPBF INSULATED GATE BIPOALR TRANSISTOR - International Rectifier

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