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D5013UK

Part Number	D5013UK
Manufacturer	Seme LAB
Description	ROHS COMPLIANT METAL GATE RF SILICON FET
Published	Jan 3, 2009
Detailed Description	TetraFET D5013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 www.DataSheet4U.c...
Datasheet	D5013UK PDF File

Overview

TetraFET D5013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 www.
DataSheet4U.
com A 1 F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.
51 B 6.
35 C 45° D 3.
30 E 18.
92 F 1.
52 G 2.
16 H 14.
22 I 1.
52 J 6.
35 K 0.
13 M 5.
08 N 1.
27 x 45° Tol.
0.
25 0.
13 5° 0.
13 0.
08 0.
13 0.
13 0.
08 0.
13 0.
13 0.
03 0.
51 0.
13 Inches 0.
650 0.
250 45° 0.
130 0.
745 0.
060 0.
085 0.
560 0.
060 0.
250 0.
005 0.
200 0.
050 x 45° Tol.
0.
010 0.
005 5° 0.
005 0.
003 0.
005 0.
005 0.
003 0.
005 0.
005 0.
001 0.
020 0.
005 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 125V ±20V 3A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk Document Number 3918 Issue 1 D5013UK www.
DataSheet4U.
com ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain D...

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D5013UK ROHS COMPLIANT METAL GATE RF SILICON FET - Seme LAB

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