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STGB18N40LZ

STMicroelectronics
Part Number STGB18N40LZ
Manufacturer STMicroelectronics
Description EAS 180 mJ - 400 V - internally clamped IGBT
Published Jan 4, 2009
Detailed Description STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 m...
Datasheet PDF File STGB18N40LZ PDF File

STGB18N40LZ
STGB18N40LZ

Overview
STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor Application ■ Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology.
The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
The device also exhibits low on-state voltage drop and low threshold drive for use in automot...


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