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PBRP123ET

NXP Semiconductors
Part Number PBRP123ET
Manufacturer NXP Semiconductors
Description PNP 800 mA
Published Jan 4, 2009
Detailed Description PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product p...
Datasheet PDF File PBRP123ET PDF File

PBRP123ET
PBRP123ET

Overview
PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ Rev.
01 — 16 January 2008 Product data sheet 1.
Product profile 1.
1 General description www.
DataSheet4U.
com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123ET.
1.
2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.
3 Applications I Digital application in automotive and indust...


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