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RSS120N03

Rohm
Part Number RSS120N03
Manufacturer Rohm
Description Switching
Published Jan 13, 2009
Detailed Description RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-...
Datasheet PDF File RSS120N03 PDF File

RSS120N03
RSS120N03

Overview
RSS120N03 Transistors Switching (30V, 12A) RSS120N03 zFeatures 1) Low on-resistance.
www.
DataSheet4U.
com 2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zExternal dimensions (Unit : mm) SOP8 5.
0±0.
2 (5) (8) 6.
0±0.
3 3.
9±0.
15 1.
5±0.
1 0.
15 zStructure Silicon N-channel MOS FET 1.
27 0.
4±0.
1 0.
1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD zEquivalent circuit Limits 30 20 ±12 ±48 1.
6 6.
4 2 150 −55 to +150 Unit V V A A A A W °C °C (8) (7) (6) (5) (8) (7) (6) (5) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 (1) ∗2 ∗1 Max.
1.
75 zApplications Power switching, DC / DC converter.
0.
5±0.
1 (1) (4) 0.
2±0.
1 (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.
Use the protection circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD Symbol Rth (ch-a) Limits 62.
5 Unit °C / W ∗ 1/3 RSS120N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance Forward transfer admittance www.
DataSheet4U.
com Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed ∗ RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min.
−...


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