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AP9575M

Advanced Power Electronics
Part Number AP9575M
Manufacturer Advanced Power Electronics
Description P-Channel MOSFET
Published Jan 15, 2009
Detailed Description AP9575M Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Sw...
Datasheet PDF File AP9575M PDF File

AP9575M
AP9575M


Overview
AP9575M Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.
DataSheet4U.
com Switching Characteristic D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -60V 90mΩ -4A ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -60 ±25 -4.
0 -3.
2 -20 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 200302041 AP9575M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min.
-60 -1 - Typ.
-0.
04 7 18 5 7 12 5 68 32 165 125 Max.
Units 90 120 -3 -1 -25 ±100 28 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A VGS=-4.
5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=±25V ID=-4A VDS=-48V VGS=-4.
5V VDS=-30V ID=-1A RG=3.
3...


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