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SI4431BDY

Vishay Siliconix
Part Number SI4431BDY
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Jan 16, 2009
Detailed Description P-Channel 30-V (D-S) MOSFET Si4431BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = - 10 V - ...
Datasheet PDF File SI4431BDY PDF File

SI4431BDY
SI4431BDY

Overview
P-Channel 30-V (D-S) MOSFET Si4431BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
030 at VGS = - 10 V - 30 0.
050 at VGS = - 4.
5 V ID (A) - 7.
5 - 5.
8 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.
5 - 6.
0 - 5.
7 - 4.
6 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.
1 - 1.
2 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
5 1.
6 1.
5 0.
9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 38 70 22 Maximum 50 85 28 Unit °C/W Document Number: 72092 S09-0131-Rev.
C, 02-Feb-09 www.
vishay.
com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70 °C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V VDS = - 5 V, VGS = - 4.
5 V Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 7.
5 A VGS = - 4.
5 V, ID = - 5.
8 A Forward Transconductancea gfs VDS = - 15 V, ID = - 7.
5 A Diode Forward Voltagea VSD IS = - 2.
1 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 7.
5 A Gate-Drain Charg...


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