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TP36N06

ST Microelectronics
Part Number TP36N06
Manufacturer ST Microelectronics
Description STP36N06
Published Jan 17, 2009
Detailed Description www.DataSheet4U.com w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER M...
Datasheet PDF File TP36N06 PDF File

TP36N06
TP36N06

Overview
www.
DataSheet4U.
com w w a D .
w S a t e e h U 4 t m o .
c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.
04 Ω < 0.
04 Ω ID 36 A 21 A TYPE VDSS 60 V 60 V STP36N06 STP36N06FI s s s s s s s s TYPICAL RDS(on) = 0.
03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25...


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