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IRFY044CM

International Rectifier
Part Number IRFY044CM
Manufacturer International Rectifier
Description POWER MOSFET N-CHANNE
Published Jan 20, 2009
Detailed Description Provisional Data Sheet No. PD 9.1285C HEXFET® POWER MOSFET www.DataSheet4U.com IRFY044CM N-CHANNEL 60 Volt, 0.040 Ω ...
Datasheet PDF File IRFY044CM PDF File

IRFY044CM
IRFY044CM

Overview
Provisional Data Sheet No.
PD 9.
1285C HEXFET® POWER MOSFET www.
DataSheet4U.
com IRFY044CM N-CHANNEL 60 Volt, 0.
040 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
Product Summary Part Number IRFY044CM BVDSS 60V RDS(on) 0.
040Ω ID 16A* Features n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY044CM Units A W W/K… V mJ A mJ V/ns °C g Continuous Drain Current 16* Continuous Drain Current 16* Pulsed Drain Current  156 Max.
Power Dissipation 100 Linear Derating Factor 0.
8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy ‚ 100 Avalance Current  16* Repetitive Avalanche Energy  10 Peak Diode Recovery dv/dt ƒ 4.
5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.
063 in (1.
6mm) from case for 10 sec) Weight 4.
3(typical) * ID current limited by pin diameter IRFY044CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) www.
DataSheet4U.
com Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Tempera...


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