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IRFY1310M-T257

Seme LAB
Part Number IRFY1310M-T257
Manufacturer Seme LAB
Description N-CHANNEL POWER MOSFET
Published Jan 20, 2009
Detailed Description www.DataSheet4U.com IRFY1310M-T257 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) ...
Datasheet PDF File IRFY1310M-T257 PDF File

IRFY1310M-T257
IRFY1310M-T257


Overview
www.
DataSheet4U.
com IRFY1310M-T257 MECHANICAL DATA Dimensions in mm (inches) 10.
41 (0.
410) 10.
67 (0.
420) 4.
83 (0.
190) 5.
08 (0.
200) 0.
89 (0.
035) 1.
14 (0.
045) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) FEATURES 16.
38 (0.
645) 16.
89 (0.
665) 13.
38 (0.
527) 13.
64 (0.
537) 3.
56 (0.
140) Dia.
3.
81 (0.
150) 10.
41 (0.
410) 10.
92 (0.
430) 1 2 3 12.
07 (0.
500) 19.
05 (0.
750) 100V 14A .
055W 0.
64 (0.
025) Dia.
0.
89 (0.
035) 2.
54 (0.
100) BSC 3.
05 (0.
120) BSC • HERMETICALLY SEALED TO257 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT TO257AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL R JC q Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) ±20V 34A 21A 136A 100W 0.
8W/°C –55 to 150°C 300°C 1.
25°C/W max.
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
7/99 www.
DataSheet4U.
com IRFY1310M-T257 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) STATIC ELECTRICAL RATINGS Parameter Drain – Source Breakdown Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current Static Drain – Source On–State Voltage1 Resistance1 DYNAMIC CHARACTERISTICS Gfs Forward Transductance 1 Ciss Coss Crss td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Modified MOSPOWER , Test Conditions VGS = ...



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