DatasheetsPDF.com

IRFY430CM

International Rectifier
Part Number IRFY430CM
Manufacturer International Rectifier
Description POWER MOSFET N-CHANNEL
Published Jan 20, 2009
Detailed Description Provisional Data Sheet No. PD 9.1291B HEXFET® POWER MOSFET www.DataSheet4U.com IRFY430CM N-CHANNEL 500 Volt, 1.5Ω HE...
Datasheet PDF File IRFY430CM PDF File

IRFY430CM
IRFY430CM

Overview
Provisional Data Sheet No.
PD 9.
1291B HEXFET® POWER MOSFET www.
DataSheet4U.
com IRFY430CM N-CHANNEL 500 Volt, 1.
5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
Product Summary Part Number IRFY430CM BVDSS 500V RDS(on) 1.
5Ω ID 4.
5A Features n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ V GS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy ‚ Avalance Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight IRFY430CM 4.
5 2.
8 18 75 0.
6 ±20 280 4.
5 7.
5 3.
5 -55 to 150 300 (0.
063 in (1.
6mm) from case for 10 sec) 4.
3 (typical) Units A W W/K… V mJ A mJ V/ns °C °C g IRFY430CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) www.
DataSheet4U.
com Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Sou...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)