DatasheetsPDF.com

IRFY9140C

International Rectifier
Part Number IRFY9140C
Manufacturer International Rectifier
Description POWER MOSFET THRU-HOLE
Published Jan 20, 2009
Detailed Description www.DataSheet4U.com PD - 91294D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY9140C IRFY9140CM IR...
Datasheet PDF File IRFY9140C PDF File

IRFY9140C
IRFY9140C

Overview
www.
DataSheet4U.
com PD - 91294D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY9140C IRFY9140CM IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY ® R DS(on) 0.
20 Ω 0.
20 Ω ID -15.
8A -15.
8A Eyelets Ceramic Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
TO-257AA Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level Applications Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -15.
8 -10 -60 100 0.
8 ±20 640 -15.
8 10 -5.
5 -55 to 150 300(0.
063in.
/1.
6mm from case for 10 sec) 4.
3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 9/29/03 www.
DataSheet4U.
com IRFY9140C, IRFY9140CM Electrical Cha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)