DatasheetsPDF.com

2SK3719

NEC
Part Number 2SK3719
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Jan 20, 2009
Detailed Description DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANS...
Datasheet PDF File 2SK3719 PDF File

2SK3719
2SK3719

Overview
DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR www.
DataSheet4U.
com 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3719 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm) 0.
3 ±0.
05 0.
2 0.
13 –0.
05 +0.
1  FEATURES 1.
2 ±0.
1 −0.
5 dB (VDS = 2.
0 V, C = 5 pF, RL = 2.
2 kΩ) • Low noise −109 dB (VDS = 2.
0 V, C = 5 pF, RL = 2.
2 kΩ) • Super thin thickness package t = 0.
37 mm TYP.
0.
8 ±0.
1 • High gain 3 0 to 0.
05 0.
45 0.
45 MAX.
0.
4 1.
4 ±0.
1 ORDERING INFORMATION PART NUMBER PACKAGE 3pXSOF (0814) 0.
2 +0.
1 –0  2SK3719   ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.
0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D16787EJ2V0DS00 (2nd edition) Date Published April 2004 NS CP(K) Printed in Japan The mark  shows major revised points.
(0.
26) 2 1 2003 2SK3719  ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS www.
DataSheet4U.
com Zero Gate Voltage Drain Cut-off Current Gate Cut-off Voltage Forward Transfer Admittance SYMBOL IDSS VGS(off) | yfs1 | | yfs2 | Input Capacitance Voltage Gain Ciss GV TEST CONDITIONS VDS = 2.
0 V, VGS = 0 V VDS = 2.
0 V, ID = 1.
0 µA VDS = 2.
0 V, ID = 30 µA, f = 1.
0 kHz VDS = 2.
0 V, VGS = 0 V, f = 1.
0 kHz VDS = 2.
0 V, VGS = 0 V, f = 1.
0 MHz VDD = 2.
0 V, C = 5 pF, RL = 2.
2 kΩ, VIN = 10 mV, f = 1 kHz Noise Voltage N...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)