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2SK3727-01

Fuji Electric
Part Number 2SK3727-01
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Jan 20, 2009
Detailed Description 2SK3727-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series w...
Datasheet PDF File 2SK3727-01 PDF File

2SK3727-01
2SK3727-01

Overview
2SK3727-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series www.
DataSheet4U.
com Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID ±2.
2 ID(puls] ±8.
8 VGS ±30 IAR *2 2.
2 EAS *1 127.
2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.
02 Tc=25°C 75 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=48.
2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS< 900V *5 VGS=-30V = -ID, -di/dt=50A/µs, Vcc < = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C Tch=125°C VDS=720V VGS=0V VGS=±30V VDS=0V ID=1.
1A VGS=10V ID=1.
1A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.
1A VGS=10V RGS=10 Ω VCC =450V ID=2.
2A VGS=10V L=48.
2mH Tch=25°C IF=2.
2A VGS=0V Tch=25°C IF=...


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