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2SK3771-01MR

ETC
Part Number 2SK3771-01MR
Manufacturer ETC
Description N-CHANNEL SILICON POWER MOSFET
Published Jan 20, 2009
Detailed Description 2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200407 FUJI POWER MOSFET www.DataSheet4U.com...
Datasheet PDF File 2SK3771-01MR PDF File

2SK3771-01MR
2SK3771-01MR


Overview
2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200407 FUJI POWER MOSFET www.
DataSheet4U.
com Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg VISO Ratings 100 70 29 ±116 ±30 29 376.
4 3.
7 20 5 37 2.
16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=12A,L=3.
14mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature kV/µs VDS< =100V and Avalanche current.
kV/µs Note *4 See to the ‘Avalanche Energy’ graph Tc=25°C W Note *3:Repetitive rating:Pulse width limited by Ta=25°C maximum channel temperature.
°C See to the ‘Transient Thermal impedance’ °C graph.
kVrms t=60sec.
f=60Hz < -ID, -di/dt = 50A/µs,VCC= < BVDSS,Tch= <150°C Note *4:IF = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th)...


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