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K07N120

Part Number	K07N120
Manufacturer	Infineon Technologies
Description	Fast IGBT in NPT-technology
Published	Jan 29, 2009
Detailed Description	SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eo...
Datasheet	K07N120 PDF File

Overview

SKW07N120 www.
DataSheet4U.
com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.
6mm (0.
063 in.
) from case for 10s Tj , Tstg Ts -55.
.
.
+150 260 °C 2 C G E PG-TO-247-3-1 (TO-247AC) VCE 1200V IC 8A Eoff 0.
7mJ Tj 150°C Marking K07N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 16.
5 7.
9 Unit V A ICpul s IF 27 27 13 7 IFpul s VGE tSC Ptot 27 ±20 10 125 V µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2_1 Apr 06 Power Semiconductors SKW07N120 www.
DataSheet4U.
com Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF ...

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K07N120 Fast IGBT in NPT-technology - Infineon Technologies

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