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EN29LV512

Eon Silicon Solution
Part Number EN29LV512
Manufacturer Eon Silicon Solution
Description 512 Kbit (64K x 8-bit ) Uniform Sector
Published Feb 3, 2009
Detailed Description www.DataSheet4U.com EN29LV512 EN29LV512 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATUR...
Datasheet PDF File EN29LV512 PDF File

EN29LV512
EN29LV512


Overview
www.
DataSheet4U.
com EN29LV512 EN29LV512 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.
0 Volt-only Flash Memory FEATURES • Single power supply operation - Full voltage range: 2.
7-3.
6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.
0-3.
6 volt read and write operations for high performance 3.
3 volt microprocessors.
• High performance - Full voltage range: access times as fast as 55 ns - Regulated voltage range: access times as fast as 45ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: Four 16 Kbyte sectors Supports full chip erase Individual sector erase supported Sector protection and unprotection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.
5V • >100K program/erase endurance cycle da0.
• Package options - 8mm x 20mm 32-pin TSOP (Type 1) - 8mm x 14mm 32-pin TSOP (Type 1) - 32-pin PLCC - • Commercial and industrial Temperature Range GENERAL DESCRIPTION The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized as 65,536 bytes.
Any byte can be programmed typically in 8µs.
The EN29LV512 features 3.
0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV512 has separate Output Enable ( OE ), Chip Enable ( ...



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