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P4NA80

ST Microelectronics
Part Number P4NA80
Manufacturer ST Microelectronics
Description STP4NA80 N-Channel MOS Transistor
Published Feb 4, 2009
Detailed Description www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80F...
Datasheet PDF File P4NA80 PDF File

P4NA80
P4NA80

Overview
www.
DataSheet4U.
com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) <3Ω <3Ω ID 4A 2.
5 A TYPICAL RDS(on) = 2.
4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP4NA80 STP4NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o V V V 2.
5 1.
6 16 45 0.
36 2000 A A A W W/o C V o o 4 2.
5 16 110 0.
88  -65 to 150 150 C C (•) Pulse width limited by safe operating area February 1994 1/10 STP4NA80/FI www.
DataSheet4U.
com THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.
13 62.
5 0.
5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 2.
77 o o o C/W C/W C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ ...


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