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MTP3N25E

Motorola
Part Number MTP3N25E
Manufacturer Motorola
Description TMOS POWER FET 3.0 AMPERES 250 VOLTS
Published Feb 8, 2009
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.DataSheet4U.com TMOS E-FET ....
Datasheet PDF File MTP3N25E PDF File

MTP3N25E
MTP3N25E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's www.
DataSheet4U.
com TMOS E-FET .
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate ™ Data Sheet MTP3N25E Motorola Preferred Device This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 3.
0 AMPERES 250 VOLTS RDS(on) = 1.
4 OHM ® D G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 3.
0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 250 250 ± 20 ± 40 3.
0 2.
0 9.
0 40 0.
32 – 55 to 150 45 3.
13 62.
5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’...


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