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HGT1S3N60C3D

Harris Corporation
Part Number HGT1S3N60C3D
Manufacturer Harris Corporation
Description UFS Series N-Channel IGBT
Published Feb 10, 2009
Detailed Description S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parall...
Datasheet PDF File HGT1S3N60C3D PDF File

HGT1S3N60C3D
HGT1S3N60C3D

Overview
S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) www.
DataSheet4U.
com January 1997 Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time .
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130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49113.
The diode used in anti-parallel with the IGBT is the development type TA49055.
The IGBT is ideal for many high voltage switchin...


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