DatasheetsPDF.com

9T16GH

Part Number	9T16GH
Manufacturer	Advanced Power Electronics
Description	AP9T16GH
Published	Feb 11, 2009
Detailed Description	www.DataSheet4U.com AP9T16GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electron...
Datasheet	9T16GH PDF File

Overview

www.
DataSheet4U.
com AP9T16GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.
5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 20V 25mΩ 25A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current 1 Rating 20 ±16 25 16 90 25 0.
2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 5 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 www.
DataSheet4U.
com AP9T16GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 Typ.
0.
01 19 10 3 5 10 98 18 6 870 160 120 1.
38 Max.
Units 25 40 1.
5 1 25 ±100 16 1390 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A VDS=VGS, ID=250uA VDS=5V, ID=18A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±16V ID=18A VDS=16V VGS=4.
5V VDS=10V ID=18A RG=3.
3Ω,VGS=5V RD=0.
56Ω VGS=0V VDS=20V f=1.
0MHz f=1.
0...

Similar Datasheet

9T16GH AP9T16GH - Advanced Power Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)