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RJK0303DPB

Renesas Technology
Part Number RJK0303DPB
Manufacturer Renesas Technology
Description Silicon N Channel Power MOS FET Power Switching
Published Feb 15, 2009
Detailed Description www.DataSheet4U.com RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 F...
Datasheet PDF File RJK0303DPB PDF File

RJK0303DPB
RJK0303DPB

Overview
www.
DataSheet4U.
com RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.
6.
00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.
1 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Note1 Ratings 30 +16/-12 40 160 40 17 28 55 2.
27 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.
6.
00 Apr 19, 2006 page 1 of ...


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